VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesScienceQuestion
Question
Science

Which outcome occurs when the oxide layer thickness increases in a floating-gate MOSFET device?

A)Program/erase speed decreases exponentially
B)Data retention improves linearly
C)Threshold voltage shifts unpredictably
D)Read disturb errors become less frequent

💡 Explanation

When oxide thickness increases, Fowler-Nordheim tunneling probability decreases exponentially because tunneling current depends inversely on oxide thickness. Therefore, program/erase speed slows down exponentially, rather than linear retention improvement, unpredictable threshold shift, or reduced read disturb errors as oxide weakens field effects.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Science