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Which outcome primarily arises when applied voltage permits electrons to occupy normally forbidden orbital energy levels in gallium nitride?

A)Increased current through the diode
B)Decreased thermal runaway threshold
C)Augmented reverse bias capacitance
D)Reduced electron-hole recombination rate

💡 Explanation

Increased current through the diode occurs because significant **tunneling** through the material's band gap allows electrons to occupy higher energy states, which increases conductivity; therefore, current increases, rather than decreases thermal threshold or changes recombination.

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