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Which outcome results from exceeding silicon's avalanche breakdown voltage?

A)Uncontrolled current increase through depletion region
B)Reduced semiconductor electron mobility
C)Increased width of the band gap
D)Dopant atoms diffuse into crystal lattice

💡 Explanation

Exceeding avalanche breakdown voltage leads to uncontrolled current increase because impact ionization creates electron-hole pairs, causing exponential carrier multiplication therefore the current surges rather than dopant diffusion or decreased mobility because the applied field exceeds the Shockley limit.

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