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Which outcome results when applying voltage to a silicon MOSFET?

A)Increased channel electron drift velocity
B)Reduced oxide layer electron tunneling
C)Elevated substrate electron temperature
D)Decreased gate electron capacitance effect

💡 Explanation

An applied voltage increases the electric field, causing increased channel electron drift velocity because electrons accelerate. Drift velocity goes up, rather than tunneling going down or the temperature being elevated; these other effects are secondary to drift.

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