Which outcome results when high drain voltage causes short-channel MOSFET electrons to gain excessive kinetic energy?

💡 Explanation

Hot carrier injection into the gate oxide significantly worsens channel length modulation because the high-energy electrons can overcome the silicon-silicon dioxide barrier, becoming trapped in the gate oxide; therefore modulation worsens, rather than improved gate linearity or modified leakage.

• Which consequence results when a PLC timing delay accumulates excessively in a robotic arc welding cell?
• Which outcome occurs when quadrature encoder pulses overlap?
• Which risk increases due to hydrogen embrittlement following incorrect weld cooling procedures on high-strength steel structures?
• Which outcome occurs when vapor bubbles collapse near the control valve in a hydraulic actuator?
• Which risk increases when casting molten metal around a hydrothermally unstable core?
• Which outcome occurs when a refrigeration system uses a ternary azeotropic refrigerant bled into atmosphere during repair?