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← ScienceWhich outcome results when internal tolerances cause nanometer variations in EUV lithography?
A)Enhanced multi-layer mirror reflectivity
B)Increased spatial interference speckle
C)Reduced photoresist sensitivity threshold
D)Decreased target critical dimension uniformity✓
💡 Explanation
Decreased critical dimension uniformity results because interference patterns distort through imperfect optics via constructive and destructive interference. Therefore the CD uniformity suffers on the wafer, rather than enhanced reflectivity which would require perfect structures.
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