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Which outcome sharply increases the etching rate as photoresist diminishes?

A)Inverse lithography mask distortions
B)Reactive ion etching breakthrough
C)Deep ultraviolet standing waves
D)Deposition enhanced by inhibitor loss

💡 Explanation

Reactive ion etching rate increases dramatically at pinholes as the photoresist erodes because increased plasma exposure accelerates etching through these thin spots, therefore a breakthrough event occurs rather than steady uniform material removal.

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