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Which phenomenon limits miniaturization of CMOS transistors below five nanometers due to electron behavior?

A)Increased channel resistance limiting current
B)Quantum tunneling through the gate oxide
C)Surface scattering reducing carrier mobility
D)Edge effects creating parasitic capacitance

💡 Explanation

When transistor dimensions shrink below five nanometers, quantum tunneling occurs because the gate oxide becomes so thin electrons can probabilistically pass through instead of being contained, creating unintended current flow. Therefore, quantum tunneling limits miniaturization, rather than resistance, scattering, or capacitance, which exist regardless of nanometer dimensions.

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