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Which process drives the increase in conductivity when doping silicon with phosphorus atoms?

A)Electron delocalization into conduction band
B)Increased phonon scattering lowering resistance
C)Hole injection into the valence band
D)Grain boundary annihilation reducing defects

💡 Explanation

When silicon is doped with phosphorus, the phosphorus atom, having an extra valence electron, contributes this electron to the lattice. This mechanism leads to electron delocalization into the conduction band because of the reduced electron affinity, resulting in increased conductivity. Therefore, electron delocalization results, rather than changes to phonon scattering, hole concentration, or grain boundary effects, which require other doping materials or processes.

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