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Which property arises in semiconductor fabrication when annealing incomplete atomic layer deposition films?

A)Improved thin-film transistor carrier mobility
B)Increased resistance to electromigration failure
C)Enhanced quantum dot-size uniformity
D)Decreased leakage current across junctions

💡 Explanation

Enhanced uniformity arises because surface diffusion minimizes the total surface energy; the driving mechanism being Ostwald ripening. Larger dots grow at the expense of smaller ones, therefore narrow size distributions result, rather than mobility or resistance improvements.

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