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Which risk increases dramatically when a semiconductor manufacturing process reduces dopant control precision?

A)Increased leakage current in transistors
B)Improved carrier mobility performance
C)Reduced channel length modulation effect
D)Higher gate oxide breakdown voltage

💡 Explanation

Increased leakage current appears because of the reduced dopant control; therefore, the band gap is less sharply defined at junctions due to increased variability, resulting in higher probabilities for quantum tunneling, rather than improved transistor performance.

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