Which risk increases inside semiconductor flash memory when exceeding a critical temperature threshold?

💡 Explanation

Because the **quantum tunneling** probability escalates exponentially with temperature, stored electrons confined in the floating gate leak through the insulation; therefore stored data reliability decreases, decreasing storage longevity; rather than increased breakdown, which correlates directly with applied voltage.

• Which risk increases when a carbon fiber composite is exposed to prolonged UV radiation?
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• Which outcome results from dielectric breakdown in electrolytic capacitors used within high-frequency switching power supplies?
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