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Which risk increases when a silicon crystal contains boron?

A)Decreased dielectric breakdown strength
B)Increased overall crystal density
C)Enhanced intrinsic semiconductivity
D)Greater thermal expansion coefficient

💡 Explanation

Smaller boron atoms introduced via doping creates acceptor states, leading to increased free hole concentration. This increases the electric field density, therefore lowering of the breakdown voltage limit for the doped silicon rather than the altering of thermal properties.

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