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Which risk increases when a silicon diode in a rectifier circuit experiences reverse recovery?

A)Increased electromagnetic interference (EMI)
B)Decreased forward voltage regulation
C)Reduced power factor correction
D)Enhanced thermal conductivity of junction

💡 Explanation

Reverse recovery causes increased EMI because the sudden rush of current as the diode switches from reverse-biased to forward-biased produces high-frequency oscillations. Therefore, EMI increases, rather than improved voltage regulation if switching transitions were smooth.

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