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Which risk increases when doping disrupts silicon crystal periodicity?

A)Increased likelihood of electron tunneling
B)Increased width of the conduction band
C)Decreased band gap energy magnitude
D)Decreased probability of phonon scattering

💡 Explanation

Dopants cause lattice defects that alter effective potential barriers; this causes increased *electron tunneling* through the altered wavefunctions of overlapping orbitals because the barriers are thinner and more frequent, therefore tunneling increases, rather than band gap or phonon effects.

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