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Which risk significantly increases near the glass-to-metal junction in a high-power rectifier diode?

A)Thermal runaway and device failure
B)Increase in reverse saturation current
C)Decrease in forward voltage drop
D)Avalanche breakdown voltage reduction

💡 Explanation

Thermal runaway will occur, because local heating increases the junction's conductivity, leading to more current, amplified locally by positive feedback. Therefore, runaway is likely, rather than a uniform affect like lowered voltage drop or avalanche, which occur globally across the semiconductor junction.

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