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Which risk to data integrity increases within DRAM chips as electromagnetic fields fluctuate?

A)Increased electron tunneling probability
B)Decreased thermal runaway threshold
C)Elevated oxide layer capacitance
D)Accelerated dopant migration speed

💡 Explanation

Increased fields cause electron quantum tunneling effect in DRAM because the charge stored in cells leaks through isolation barriers, therefore compromising data retention, rather than thermal effects or material property changes under normal operating conditions.

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