Which unintended outcome occurs when excessive gate voltage increases in a flash memory cell?

A)Increased bit error rate✓

B)Reduced storage capacity

C)Improved data retention

D)Enhanced write speed

💡 Explanation

Increased gate voltages can cause electrons to overcome the potential barrier via Quantum Tunneling, leading to unintended charging/discharging of the floating gate, because it skews threshold voltages. Therefore a bit error rate rises rather than retention, and other cells may be affected.

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Which unintended outcome occurs when excessive gate voltage increases in a flash memory cell?

💡 Explanation

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