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Which mechanism causes increased electrical resistivity in polycrystalline silicon?

A)Grain boundary electron scattering
B)Increased phonon-phonon interactions
C)Enhanced Umklapp scattering events
D)Augmented electron-hole recombination

💡 Explanation

Grain boundaries impede electron motion because they disrupt the crystal lattice periodicity; therefore, grain boundary electron scattering increases resistivity, rather than phonon scattering influencing electron mobility or electron-hole recombination directly affecting conduction.

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