Which outcome occurs when exceeding the gate-source voltage ($V_{GS}$) maximum specification in a power MOSFET?

💡 Explanation

Gate oxide rupture occurs when $V_{GS}$ exceeds the maximum because field strength surpasses the dielectric strength of the $SiO_2$ insulating layer via dielectric breakdown, therefore conduction occurs rather than transistor behavior; alternative failures might occur at dissimilar voltages or conditions.

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