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Which outcome occurs when introducing substitutional impurities in a semiconductor crystal?

A)Increased free carrier concentration
B)Increased thermal conductivity limits
C)Reduced crystal lattice vibrations
D)Higher intrinsic breakdown voltage

💡 Explanation

The substitutional impurities cause increased free carrier concentration because they contribute extra electrons or holes. This process is called doping, therefore conductivity is enhanced, rather than effects involving lattice vibrations or breakdown under high voltage.

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