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Which risk increases in a MOSFET operating repeatedly near its gate oxide breakdown voltage?

A)Channel length modulation increases sharply
B)Threshold voltage instability accelerates
C)Subthreshold leakage current reduces
D)Thermal carrier generation is suppressed

💡 Explanation

Increased risk of threshold voltage instability emerges because the Fowler-Nordheim tunneling injects charges into the gate oxide, permanently altering its electrical properties. Therefore the threshold voltage changes rather than other channel characteristics varying minimally under normal conditions.

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